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MS1051 Datasheet, Advanced Power Technology

MS1051 transistors equivalent, rf & microwave transistors.

MS1051 Avg. rating / M : 1.0 rating-17

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MS1051 Datasheet

Features and benefits


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* 30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB MINIMUM IMD =
  –30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGU.

Description

The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSO.

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MS1051 Page 1 MS1051 Page 2 MS1051 Page 3

TAGS

MS1051
MICROWAVE
TRANSISTORS
Advanced Power Technology

Manufacturer


Advanced Power Technology

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