AP6900GSM mosfet equivalent, dual n-channel enhancement mode power mosfet.
and suited for low voltage applications such as DC/DC converters.
D1
G1 N-Channel 1
MOSFET
30V 30mΩ 5.7A
30V 22mΩ 9.8A.
S1/D2 S1/D2 S1/D2 G1
SO-8
S2/A
G2 D1 D1
CH-1 CH-2
BVDSS
RDS(ON)
ID BVDSS RDS(ON) ID
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffect.
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