Datasheet Details
| Part number | AP6902AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 154.51 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | AP6902AGH-HF_AdvancedPowerElectronics.pdf |
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Overview: AP6902AGH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ Two Independent Device ▼ Halogen Free & RoHS pliant S1 G1 S2 G2 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 (TAB1) D2 (TAB2) BVDSS RDS(ON) ID 30V 9.
| Part number | AP6902AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 154.51 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | AP6902AGH-HF_AdvancedPowerElectronics.pdf |
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|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.
SDPAKTM D1 D2 G1 S1 G2 S2 http://..net/ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 52 13.8 11 50 3 -55 to 150 -55 to 150 Units V V A A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 3 42 Unit ℃/W ℃/W 1 201303041 datasheet pdf - http://..net/ Data and specifications subject to change without notice AP6902AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=12A VGS=4.5V, ID=8A Min.
| Part Number | Description |
|---|---|
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