AP6902AGH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.
SDPAKTM
D1 D2
G1 S1
G2 S2 http://..net/
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 52 13.8 11 50 3 -55 to 150 -55 to 150
Units V V A A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
Value 3 42
Unit ℃/W ℃/W 1 201303041 datasheet pdf
- http://..net/
Data and specifications...
