AP4604I
AP4604I is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TTOO-2-2200p Ca Fc Mkagpeaicskawgideelyisprewfeidrerelyd fporeafellrrceodmmfoerrcial-l icnodmumstreiarcl ialt-hinrdousgthrial htohlreougahpphliocaletioanpsp. lic Tathioens.low Thethemrmoaldl rceosmisptaonucned apnrodvildoews paahcikgahgeisocloastitoncovnotlrtiabguetecatopathbeilitwy oarnlddwliodwe pthoeprumlaarl rpeascisktaagnec.e between the tab and the external heat-sink.
BVDSS RDS(ON) ID
40V 2.5mΩ 100A
GD S
TO-220CFM(I)
Absolute
Symbol
Maximum
Rating Psa@ram Tej=te2r 5o C. (unless otherwise specified)
Rating
Units
VDS Drain-Source Voltage
40 V
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG
Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy3
Storage Temperature Range
+20 100 73.4 320 50 2.3 80 -55 to 175
V A A A W W m J ℃
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 3 65
Units ℃/W ℃/W
1 201512031
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test...
