AP4606B - 30V N+P-Channel Enhancement Mode MOSFET

APM

General Description

The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 30V ID =6.8A RDS(ON) < 28mΩ @ VGS=10V （Type：20mΩ） VDS = -30V ID =-6.1A RDS(ON) < 50mΩ @ VGS=-10V（Type：42mΩ）.

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AP4606B 30v n+p-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP4606B
Manufacturer	APM
File Size	1.58 MB
Description	30V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP4606B Datasheet

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Full PDF Text Transcription (Reference)

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AP4606B 30V N+P-Channel Enhancement Mode MOSFET Description The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6.8A RDS(ON) < 28mΩ @ VGS=10V （Type：20mΩ） VDS = -30V ID =-6.1A RDS(ON) < 50mΩ @ VGS=-10V（Type：42mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP4606B SOP-8L Marking AP4606B XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 6.8 -6.