AP2N7002K Datasheet, Advanced Power Electronics

D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltag.

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S.

AP2N7002K-HF

AP2N7002K-HF-3

AP2N025N

AP200-B10

AP200-B420L

AP2000

AP2001

AP2002

AP2003

AP2004

AP2004H

AP2007

AP2008