AP2N025N - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
AP2N025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Advanced Power Electronics Corp.
AP2N025N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge
D
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
SOT-23S G
Description
AP2N025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S
BVDSS RDS(ON) ID
G
20V 25mΩ 5.7A D
S
Absolute Maximum Ratings@Tj=25o.
AP2N025N Datasheet
