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AP18P10GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP18P10GJ datasheet PDF (AP18P10GH included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for p-channel enhancement mode power mosfet.

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (AP18P10GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -100V 180mΩ -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18P10GJ) is available for low-profile applications.
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