| Description | AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high ... |
| Features |
ent, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
600 +30
2 1.26 3.6 22 80 -55 to 150 -55 to 150
V V A A A W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum...
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| Datasheet |
 AP02N60I-HF Datasheet - 62.45KB |
