Datasheet4U Logo Datasheet4U.com

AP02N60H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP02N60J) is available for low-profile applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP02N70EJ-HF N-Channel 700V Power MOSFET VBsemi
AP0202AT High-Dynamic Range (HDR) Image Signal Processor ON Semiconductor
AP01 8 Channel Power MOSFET Supertex Inc
AP0100CS High-Dynamic Range (HDR) Image Signal Processor Aptina
AP0100CS High-Dynamic Range (HDR) Image Signal Processor ON Semiconductor

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP02N60H-H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60H-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60H-H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP02N60H/J www.DataSheet4U.com Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 600V 8Ω 1.6A Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 1.
Published: |