* Platinum tri-metal system High temperature stability
* Silicon nitride passivation Stable, reliable performance
* Low noise figure Guaranteed 7.5 dB at 26 G.

The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform d.

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride pa.

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