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STK03Y60 - Advanced Power MOSFET

Features

  • High Voltage: BVDSS=600V(Min. ).
  • Low Crss : Crss=4pF(Typ. ).
  • Low gate charge : Qg=12nC(Typ. ).
  • Low RDS(on) : RDS(on)=5.5Ω(Typ. ) www. DataSheet4U. com Ordering Information Type NO. STK03Y60 Marking STK03Y60 Package Code TO-92 Outline Dimensions 4.40~4.80 4.40~4.80 unit : mm 0.50 Max. 13.50~14.50 1.27 Typ. 1.27 Typ. 1 3.40~3.60 2 3 PIN Connections 1. Gate 2. Drain 3. Source 0.45 Max.

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Datasheet Details

Part number STK03Y60
Manufacturer AUK
File Size 187.73 KB
Description Advanced Power MOSFET
Datasheet download datasheet STK03Y60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TENTATIVE Semiconductor STK03Y60 Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=5.5Ω(Typ.) www.DataSheet4U.com Ordering Information Type NO. STK03Y60 Marking STK03Y60 Package Code TO-92 Outline Dimensions 4.40~4.80 4.40~4.80 unit : mm 0.50 Max. 13.50~14.50 1.27 Typ. 1.27 Typ. 1 3.40~3.60 2 3 PIN Connections 1. Gate 2. Drain 3. Source 0.45 Max. TENTATIVE 1 TENTATIVE STK03Y60 Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) ** * ** (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 0.3 1.2 625 0.3 53 0.