STK0380F - Advanced N-Ch Power MOSFET

AUK

Key Features

Drain-source breakdown voltage: BVDSS=800V (Min. ).
Low gate charge: Qg=14.2nC (Typ. ).
Low drain-source On resistance: RDS(on)=3.5Ω (Typ. ).
RoHS compliant device.
100% avalanche tested Ordering Information Part Number Marking Package STK0380F STK0380 TO-220F-3L GDS TO-220F-3L Marking Information SMN 03T80.

STK0380F advanced n-ch power mosfet by AUK - Datasheet Preview

Datasheet Details

Part number	STK0380F
Manufacturer	AUK
File Size	368.07 KB
Description	Advanced N-Ch Power MOSFET
Datasheet	STK0380F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STK0380F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-source breakdown voltage: BVDSS=800V (Min.)  Low gate charge: Qg=14.2nC (Typ.)  Low drain-source On resistance: RDS(on)=3.5Ω (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package STK0380F STK0380 TO-220F-3L GDS TO-220F-3L Marking Information SMN 03T80 YWAWUAKUK SGTFKΔY0YM3MD8DD0 D SDB20D45 Column 1 : Manufacturer Column 2 : Production Information e.g.) GFYMDD -. G : Option Code (H : Halogen Free) -. F : Factory Management Code -.