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ASI

MT5C2564 Datasheet Preview

MT5C2564 Datasheet

SRAM

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Austin Semiconductor, Inc.
SRAM
MT5C2564
64K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-88681
• MIL-STD-883
FEATURES
• High Speed: 15, 20, 25, 35, 45, 55, and 70
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS
• Timing
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
MARKING
-15
-20
-25
-35
-45
-55*
-70*
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C No. 106
EC No. 204
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns
access devices.
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
A9 10
CE\ 11
Vss 12
24 Vcc
23 A15
22 A14
21 A13
20 A12
19 A11
18 A10
17 DQ4
16 DQ3
15 DQ2
14 DQ1
13 WE\
28-Pin LCC (EC)
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
A8 10
A9 11
CE\ 1 2
3 2 1 28 27
26 A15
25 A14
24 A13
23 A12
22 A11
21 A10
2 0 DQ4
1 9 DQ3
1 8 DQ2
13 14 15 16 17
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS and are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) on all organiza-
tions. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x4 configuration
features common data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power re-
quirements.
These devices operate from a single +5V power sup-
ply and all inputs and outputs are fully TTL compatible.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C2564
Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1




ASI

MT5C2564 Datasheet Preview

MT5C2564 Datasheet

SRAM

No Preview Available !

Austin Semiconductor, Inc.
SRAM
MT5C2564
FUNCTIONAL BLOCK DIAGRAM
VCC GND
A0
A1
A2
A3
A4 262,144-BIT
MEMORY ARRAY
A5
A13
A14
A15
COLUMN DECODER
A6 A7 A8 A9 A10 A11 A12
DQ4
POWER
DOWN
DQ1
CE\
WE\
TRUTH TABLE
MODE
CE\ WE\
DQ
POWER
STANDBY H
X HIGH-Z STANDBY
READ
LH
Q ACTIVE
WRITE
LL
D ACTIVE
MT5C2564
Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Part Number MT5C2564
Description SRAM
Maker ASI
PDF Download

MT5C2564 Datasheet PDF






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