MT5C2565 Datasheet (ASI) - 64K x 4 SRAM MEMORY ARRAY

MT5C2565, 64K x 4 SRAM MEMORY ARRAY

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell.

Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Austin Semiconductor offers

MT5C2565 Features

* High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process

* Single +5V (+10%) Power Supply

* Easy memory expansion with CE

* All inputs and output