AWT6251 module equivalent, linear power amplifier module.
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* InGaP HBT Technology High Efficiency: 38% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = .
* Dual Mode 3GPP Wireless Handsets
M7 Package 10 Pin 4 mm x 4 mm x 1.5 mm Surface Mount Module
PRODUCT DESCRIPTION.
The AWT6251 meets the increasing demands for higher output power in 3GPP handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMI.
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