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AWT6270 - Linear Power Amplifier Module

General Description

The AWT6270 meets the increasing demands for higher output power in UMTS handsets.

The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.

Key Features

  • InGaP HBT Technology High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm.
  • Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode:.

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Datasheet Details

Part number AWT6270
Manufacturer ANADIGICS
File Size 310.73 KB
Description Linear Power Amplifier Module
Datasheet download datasheet AWT6270 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AWT6270 HELP TM 830-840 MHz WCDMA 3.4V/27dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • • InGaP HBT Technology High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm • • • • • Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.61 mm Max AWT6270 APPLICATIONS • Dual Band WCDMA Wireless Handsets M7 Package 10 Pin 4 mm x 4 mm x 1.6 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6270 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.