AWT6270 Description
The AWT6270 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for patibility with the Qualm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness.
AWT6270 Key Features
- InGaP HBT Technology High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm
- Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimize