AWT6270
FEATURES
- - In Ga P HBT Technology High Efficiency: 44% @ POUT = +27 d Bm 21% @ POUT = +16 d Bm 15% @ POUT = +7 d Bm
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- Low Quiescent Current: 16 m A Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.61 mm Max
APPLICATIONS
- Dual Band WCDMA Wireless Handsets
M7 Package 10 Pin 4 mm x 4 mm x 1.6 mm Surface Mount Module
PRODUCT DESCRIPTION
The AWT6270 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for patibility with the Qualm® 6250 chipset. The device is manufactured on an advanced In Ga P HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x...
