SSC8362GS1 mosfet equivalent, dual n-channel enhancement mode mosfet.
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 6.5A
* General Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS t.
* Inverter;
* Pin configuration
Top View
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.com
1/5
Anal.
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/D.
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