SSC8326GS1V1.0 datasheet, mosfet equivalent, AFSEMI

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 227.59KB)

Features and benefits

* VDS VGS 20V ±12V RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V5 ID 6A
*
* General Description This device combines 2 N-channel enhancement mode MOSFETs,which us.

Application

* Package Information Applications
* Li-ion battery;
* Load swich;
* Battery charger Pin configuration.

Description

This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM .

Image gallery