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SSC8333GS1 Datasheet, AFSEMI

SSC8333GS1 mosfet equivalent, dual p-channel enhancement mode mosfet.

SSC8333GS1 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 198.67KB)

SSC8333GS1 Datasheet
SSC8333GS1
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 198.67KB)

SSC8333GS1 Datasheet

Features and benefits


* Applications
* TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 61mR@-10V 77mR@-4V5 ID -4.5A
* High Side DC/DC Converter
* High Side Driver for.

Application


* TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 61mR@-10V 77mR@-4V5 ID -4.5A
* High Side DC/DC Conver.

Description

Top View D1 D1 D2 D2 This device combines 2 P-Channel enhancement mode power FETs which are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited fo.

Image gallery

SSC8333GS1 Page 1 SSC8333GS1 Page 2 SSC8333GS1 Page 3

TAGS

SSC8333GS1
Dual
P-Channel
Enhancement
Mode
MOSFET
AFSEMI

Manufacturer


AFSEMI

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