SSC8336GS1 mosfet equivalent, dual n-channel enhancement mode mosfet.
* Applications
* Inverter;
VDS VGS
RDSon TYP
ID
30V ±20V
16mR@10V 20mR@4V5
9A
* Pin configuration
* General Description
Top View
This N-Channel.
* Inverter;
VDS VGS
RDSon TYP
ID
30V ±20V
16mR@10V 20mR@4V5
9A
* Pin configuration
* General Descrip.
Top View
This N-Channel enhancement mode power FETs are produced with high
cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device is suitable for use as a load
switch，power management in PWM c.
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