SSC8039GT4 mosfet equivalent, p-channel enhancement mode mosfet.
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -50A
* Applications
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* Ge.
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* General Description
Top View
T.
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given volta.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 306.29KB)