SSC8039GQ4 mosfet equivalent, p-channel enhancement mode mosfet.
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
* Applications
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* Ge.
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* General Description
Bottom View.
Bottom View
This device is produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage power management
requiring a wild range of given vol.
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