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ACE6428B - N-Channel MOSFET

General Description

The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a high side switch in SMPS and general purpose applications.

Key Features

  • VDS(V)=30V.
  • ID=43A (VGS=10V).
  • RDS(ON)＜10mΩ (VGS=10V).
  • RDS(ON)＜14.5mΩ (VGS=4.5V).
  • 100% Delta Vsd Tested.
  • 100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC TA=100 OC ID 43 27 A Drain Current (Pulse) C IDM 80 Drain Current (Continuous) TA=25 OC TA=70 OC IDSM 11 A 8 Power Dissipation B TA=25 OC TA=100 OC PD 30 W 12 Power Dissipation A.

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Datasheet Details

Part number ACE6428B
Manufacturer ACE Technology
File Size 702.09 KB
Description N-Channel MOSFET
Datasheet download datasheet ACE6428B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACE6428B N-Channel Enhancement Mode Field Effect Transistor Description The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features  VDS(V)=30V  ID=43A (VGS=10V)  RDS(ON)＜10mΩ (VGS=10V)  RDS(ON)＜14.5mΩ (VGS=4.5V)  100% Delta Vsd Tested  100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC TA=100 OC ID 43 27 A Drain Current (Pulse) C IDM 80 Drain Current (Continuous) TA=25 OC TA=70 OC IDSM 11 A 8 Power Dissipation B TA=25 OC TA=100 OC PD 30 W 12 Power Dissipation A TA=25 OC TA=70 OC PDSM 2 W 1.