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ACE6428D Datasheet N-Channel MOSFET

Manufacturer: ACE Technology

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Datasheet Details

Part number ACE6428D
Manufacturer ACE Technology
File Size 698.82 KB
Description N-Channel MOSFET
Download ACE6428D Download (PDF)

General Description

The ACE6428D uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a high side switch in SMPS and general purpose applications.

Overview

ACE6428D N-Channel Enhancement Mode Field Effect Transistor.

Key Features

  • VDS(V)=30V.
  • ID=43A (VGS=10V).
  • RDS(ON)＜5.5mΩ (VGS=10V).
  • RDS(ON)＜9.5mΩ (VGS=4.5V).
  • 100% Delta Vsd Tested.
  • 100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC TA=100 OC ID 43 27 A Drain Current (Pulse) C IDM 100 Drain Current (Continuous) TA=25 OC TA=70 OC IDSM 11 A 8 Power Dissipation B TA=25 OC TA=100 OC PD 30 W 12 Power Dissipation.

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