ACE5213A mosfet equivalent, p-channel mosfet.
* P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
* Super high density cell design for extre.
such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.
The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.
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