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ACE5212A - N-Channel MOSFET

General Description

high cell density, DMOS trench technology.

switching performance.

Key Features

  • 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V.
  • 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V.
  • 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ACE5212A
Manufacturer ACE Technology
File Size 407.57 KB
Description N-Channel MOSFET
Datasheet download datasheet ACE5212A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACE5212A N-Channel Enhancement Mode MOSFET Description The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V • 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V • 20V/0.45A, RDS(ON) =800mΩ@VGS=1.