ACE5212A mosfet equivalent, n-channel mosfet.
* 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V
* 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
* 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V
* Super high density cell design for extremely.
such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.
The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior
switchin.
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