ACE5212A Datasheet | ACE Technology

N-Channel Enhancement Mode MOSFET Description The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features - 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V - 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V - 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability Application - Drivers : Relays/Solenoids/Lamps/Hammers - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers VER 1.1 1 N-Channel Enhancement Mode...