ACE2305 mosfet equivalent, p-channel enhancement mode mosfet.
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-15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A, RDS(ON)=.
P-Channel Enhancement Mode MOSFET
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.
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