ACE2301 mosfet equivalent, p-channel enhancement mode mosfet.
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VDS=-20V RDS(ON),[email protected],[email protected]=100mΩ RDS(ON),[email protected],[email protected]=150mΩ Advanced trench process technology High Density Cell Design F.
P-Channel Enhancement Mode MOSFET
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state .
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