| Part Number | Description | Manufacture |
|---|---|---|
|
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET tion Storage Temperature Range Operating Junction Temperature Range +12 5.7 4.6 20 1.25 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to |
 Advanced Power Electronics |
|
|
N-Channel Power MOSFET • 2A, 80V and 100V • rDS(ON) 1.05Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Moun |
 Intersil Corporation |
|
|
N-Channel Power MOSFET • 2A, 80V and 100V • rDS(ON) = 1.050Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Line |
Intersil Corporation |
|
|
VOLTAGE CLAMPED CURRENT LIMITING MOSFET current limiting for short circuit protection, integrated Gate –Source clamping for ESD protection and integral Gate –Drain clamping for over –voltage protection and Sensefet technology for low on –resistance. No additional gate series resistance is requ |
 Motorola |
|
|
SPB160N04S2L-03 • N-Channel Product Summary VDS RDS(on) max. SMD version ID 40 2.7 160 P- TO263 -7-3 V mΩ A • Enhancement mode • Logic Level • High Current Rating • Low On-Resistance RDS(on) • 175°C operating temperature • Avalanche rated • d v/dt rated Type Pac |
 Infineon |
|
|
MOSFET current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and Sensefet technology for low on−resistance. No additional gate series resistance is requ |
 ON Semiconductor |
