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Intersil Electronic Components Datasheet

RFP2N08L Datasheet

2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs

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RFP2N08L pdf
Data Sheet
RFP2N08L, RFP2N10L
July 1999 File Number 2872.2
2A, 80V and 100V, 1.050 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP2N08L and RFP2N10L are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic circuit supply voltages.
Formerly developmental type TA0924.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08L
TO-220AB
RFP2N08L
RFP2N10L
TO-220AB
RFP2N10L
NOTE: When ordering, include the entire part number.
Features
• 2A, 80V and 100V
• rDS(ON) = 1.050
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-248
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP2N08L Datasheet

2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs

No Preview Available !

RFP2N08L pdf
RFP2N08L, RFP2N10L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP2N08L
80
80
2
5
±10
25
0.2
-55 to 150
300
260
RFP2N10L
100
100
2
5
±10
25
0.2
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
RFP2N08L
BVDSS VGS = 0V, ID = 250µA
80
RFP2N10L
100
Gate to Threshold Voltage
Gate to Source Leakage
Zero to Gate Voltage Drain Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA
VGS = ±10V, VDS = 0V
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
ID = 2A, VGS = 5V
ID = 2A, VGS = 5V, (Figures 6, 7)
ID = 2A, VDD = 50V, RG = 6.25,
RL = 25, VGS = 5V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 9)
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Reverse Recovery Time
trr ISD = 2A, dISD/dt = 50A/µs
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
-
-
TYP MAX UNITS
-- V
-- V
- 2.0 V
- ±100 nA
- 1.0 µA
- 25 µA
- 2.1 V
- 1.050
10 25
ns
15 45
ns
25 45
ns
20 25
ns
- 200 pF
- 80 pF
- 35 pF
- 5 oC/W
TYP MAX UNITS
- 1.4
V
100 -
ns
6-249


Part Number RFP2N08L
Description 2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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