| No |
Part Number |
Description |
Manufacture |
PDF |
| 1 |
PF08107B |
MOS FET Power Amplifier Module |
Hitachi Semiconductor
|
|
| 2 |
PF08103B |
MOS FET Power Amplifier |
Hitachi Semiconductor
|
|
| 3 |
PF08109B |
MOS FET Power Amplifier Module |
Hitachi
|
|
| 4 |
F0810xH |
Fast Switching SCR |
ST Microelectronics
|
|
| 5 |
F0810 |
Fast Switching SCR |
Tag Semiconductors
|
|
| 6 |
BLF0810-180 |
Base station LDMOS transistors |
NXP
|
|
| 7 |
BLF0810-90 |
Base station LDMOS transistors |
NXP
|
|
| 8 |
PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor
|
|
| 9 |
PF08109B-TB |
Micro Module Specifications |
Samsung Electronics
|
|
| 10 |
BLF0810S-90 |
Base station LDMOS transistors |
NXP
|
|
