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NXP Semiconductors Electronic Components Datasheet

BLF0810-90 Datasheet

Base station LDMOS transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90
Base station LDMOS transistors
Product specification
Supersedes data of 2003 May 09
2003 Jun 12


NXP Semiconductors Electronic Components Datasheet

BLF0810-90 Datasheet

Base station LDMOS transistors

No Preview Available !

BLF0810-90 pdf
www.DataSheet4U.com
Philips Semiconductors
Base station LDMOS transistors
Product specification
BLF0810-90; BLF0810S-90
FEATURES
Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V and IDQ of 560 mA.
Adjacent channel bandwidth is 30 kHz, adjacent
channel at ± 750 kHz:
– Output power = 15 W (AV)
– Gain = 16 dB
– Efficiency = 27%
– ACPR = 46 dBc at 750 kHz and BW = 30 kHz
70 W CW performance
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
APPLICATIONS
RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier operations in the
800 to 1000 MHz frequency range.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
handbook, halfpage
1
Top view
2
3
MBK394
Fig.1 Simplified outline SOT502A (BLF0810-90).
1
3
Top view
2
MBL105
Fig.2 Simplified outline SOT502B (BLF0810S-90)
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
(V) (W)
Class-AB (2-tone)
CDMA (IS95)
f1 = 890.0; f2 = 890.1
890
27
27
70 (PEP)
15 (AV)
Gp
(dB)
16
16
ηD d3 ACPR 750
(%) (dBc) (dBc)
39 28
27 − −46
2003 Jun 12
2


Part Number BLF0810-90
Description Base station LDMOS transistors
Maker NXP
Total Page 16 Pages
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