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2SD1758 Datasheet

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No Part Number Description Manufacture PDF
5 2SD1758 Medium Power Transistor

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epita
Rohm
Rohm
2SD1758 pdf
4 2SD1758 Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1758 DESCRIPTION ·Large current capacitance ·Low Vce(sat) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfo
Inchange Semiconductor
Inchange Semiconductor
2SD1758 pdf
3 2SD1758 PNP Transistor

RoHS 2SD1758 2SD1758 TRANSISTOR (PNP) TO-252-2 DFEATURES TPower dissipation .,LPCM: 2 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage OV(BR)CBO: 40 V Operating and storage junct
WEJ
WEJ
2SD1758 pdf
2 2SD1758 Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLL
TRANSYS
TRANSYS
2SD1758 pdf
1 2SD1758 Medium Power Transistor

SMD Type Medium Power Transistor 2SD1758 TO-252 Transistors Features Low VCE(sat), VCE(sat) = 0.5V (IC = 2A, IB = 0.2A). Epitaxial planar type +0.2 9.70 -0.2 +0.15 1.50 -0.15 U
Guangdong Kexin Industrial
Guangdong Kexin Industrial
2SD1758 pdf



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