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2SD1758 Datasheet

Plastic-Encapsulated Transistors

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2SD1758 pdf
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TO-252-2 Plastic-Encapsulated Transistors
2SD1758 TRANSISTOR (PNP)
TO-252-2
FEATURES
Power dissipation
PCM:
2 W (Tamb=25)
Collector current
ICM: 2 A
Collector-base voltage
V(BR)CBO: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1. BASE
2. COLLECTOR
3. EMITTER
1 23
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA , IE=0
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA, IC=0
Collector cut-off current
ICBO
VCB=-20V , IE=0
Emitter cut-off current
IEBO
VEB=4V , IC=0
DC current gain
hFE VCE= 3V , IC=500mA
Collector-emitter saturation voltage VCE(sat)
IC=2A, IB=0.2A
Transition frequency
fT VCE= 5V, IE= 50mA,f=100MHz
40
32
5
82
80
V
V
V
1 µA
1 µA
390
0.8 V
MHz


Part Number 2SD1758
Description Plastic-Encapsulated Transistors
Maker TRANSYS
Total Page 1 Pages
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