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Zetex Semiconductors
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ZXM41N0F Datasheet Preview

ZXM41N0F Datasheet

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET

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ZXM41N0F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
BVDSS = 100V
Low Threshold
DEVICE MARKING
410
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Drain-gate voltage
Continuous drain current at Tamb=25°C
Pulsed drain current
Gate-source voltage
Power dissipation at Tamb=25°C
Operating and storage temperature range
PINOUT TOP VIEW
SYMBOL
VDS
VDGR
ID
IDM
VGS
Ptot
Tj:Tstg
VALUE
100
100
170
680
± 20
360
-55 to +150
SOT23
UNIT
V
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-body leakage
Zero gate voltage drain current
Static drain-source on-state
resistance (1)
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Forward transconductance (1)(2)
Input capacitance (2)
Common source output
capacitance (2)
Reverse transfer capacitance (2)
Turn-on delay time (2)(3)
Rise time (2)(3)
Turn-off delay time (2)(3)
Fall time (2)(3)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
100
0.5
80
25
9
4
10
10
15
25
V ID=0.25mA, VGS=0V
1.5
V
I =1mA,
D
VDS=
VGS
50 nA VGS=±20V, VDS=0V
500 nA VDS=100V, VGS=0V
8 VGS=4.5V, ID=150mA
12 VGS=3V, ID=50mA
mS VDS=25V, ID=100mA
pF
pF VDS=25V, VGS=0V, f=1MHz
pF
ns
ns VDD 30V, ID=280mA
ns
ns
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
ISSUE 1 - JANUARY 2004
1
SEMICONDUCTORS



Zetex Semiconductors
Zetex Semiconductors

ZXM41N0F Datasheet Preview

ZXM41N0F Datasheet

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET

No Preview Available !

ZXM41N0F pdf
ZXM41N0F
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters
Min Max
Inches
Min Max DIM
A 2.67 3.05 0.105 0.120 H
B 1.20 1.40 0.047 0.055 K
C 1.10 0.043 L
D 0.37 0.53 0.015 0.021 M
F 0.085 0.15 0.0034 0.0059 N
G 1.90 NOM
0.075 NOM
Millimeters
Min Max
0.33 0.51
0.01 0.10
2.10 2.50
0.45 0.64
0.95 NOM
10Њ TYP
Inches
Max Max
0.013 0.020
0.0004 0.004
0.083 0.0985
0.018 0.025
0.0375 NOM
10Њ TYP
© Zetex plc 2003
Europe
Americas
Asia Pacific
Corporate Headquaters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex plc
Fields New Road, Chadderton
Oldham, OL9 8NP
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - JANUARY 2004
SEMICONDUCTORS
2


Part Number ZXM41N0F
Description SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
Maker Zetex Semiconductors
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