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Vishay Intertechnology Electronic Components Datasheet

S268P Datasheet

Silicon PIN Photodiode Array

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S268P pdf
Silicon PIN Photodiode Array
S268P
Vishay Telefunken
Description
S268P is a silicon PIN photodiode array in a inline con-
figuration.
Three single photodiode chips with a common cathode
are mounted in a waterclear 8 pin dual in line package.
Each chip measures 3mm by 3mm and provides a ra-
diant sensitive area of 7.5 mm2.
Features
D Three photodiodes with common cathode
D Fast response times
D Small junction capacitance
D High photo sensitivity
D Large radiant sensitive area (A = 3 x 7.5 mm2)
D Wide angle of half sensitivity ϕ = ± 65°
D Suitable for visible and near infrared radiation
94 8684
Applications
High speed and high sensitive PIN photodiode array for industrial applications, measuring and control
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
xt 3 s, mounted on
plated, printed board
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
K/W
Document Number 81538
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


Vishay Intertechnology Electronic Components Datasheet

S268P Datasheet

Silicon PIN Photodiode Array

No Preview Available !

S268P pdf
S268P
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
Reverse Light Current Ratio of
Test Conditions
mIR = 100 A, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2
Ee = 1 mW/cm2
lEA = 1 klx
Ee = 1 mW/cm2, = 950 nm
lEA = 1 mW/cm2,
= 950 nm
EA = 1 klx, VR = 5 V
lEe = 1 mW/cm2,
= 950 nm, VR = 5 V
Symbol
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
Ik
TKIk
Ira
Ira
Min
60
40
Typ Max Unit
V
2 30 nA
70 pF
25 40 pF
350 mV
–2.6 mV/K
70 mA
47 mA
0.1 %/K
75 mA
50 mA
1:1.2
Two Diodes
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
lVR = 10 V, = 950 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
ϕ
ll0p.5
NEP
tr
tf
±65
900
600...1050
4x10–14
100
100
deg
nm
nm
W/Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20 40
VR=10V
60 80
100
94 8403
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
l1.2 VR=5V
=950nm
1.0
0.8
0.6
0 20 40 60 80 100
94 8416
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81538
Rev. 2, 20-May-99


Part Number S268P
Description Silicon PIN Photodiode Array
Maker Vishay Telefunken
Total Page 5 Pages
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