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SIA811DJ Datasheet

P-Channel 20-V (D-S) MOSFET

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SPICE Device Model SiA811DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 74367
S-70135Rev. A, 29-Jan-07
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SIA811DJ Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

SIA811DJ pdf
SPICE Device Model SiA811DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
VDS = VGS, ID = 250 µA
VDS ≤ −5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 2.8 A
VGS = 2.5 V, ID = 2.3 A
VGS = 1.8 V, ID = 0.54 A
VDS = 10 V, ID = 2.8 A
IS = 4.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 8 V, ID = 4.5 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 4.5 A
Qgd
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
0.82
35
0.080
0.108
0.143
8
0.84
0.078
0.109
0.153
7
0.85
456 355
63 75
48 50
5.8 8.5
3.5 4.9
0.75
0.75
1.2 1.2
Unit
V
A
S
V
pF
nC
www.vishay.com
2
Document Number: 74367
S-70135Rev. A, 29-Jan-07


Part Number SIA811DJ
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 3 Pages
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