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Vishay Intertechnology Electronic Components Datasheet

VS-UFB210FA40P Datasheet

Insulated Ultrafast Rectifier Module

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VS-UFB210FA40P pdf
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VS-UFB210FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 210 A
SOT-227
14
23
PRODUCT SUMMARY
VR
IF(AV) per module at TC = 133 °C
trr
Type
Package
400 V
210 A
40 ns
Modules - Diode FRED Pt®
SOT-227
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-UFB210FA40P insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VR
IF (1)
IFSM
PD
VISOL
TJ, TStg
TC = 90 °C
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 minute
400
210
1300
531
2500
-55 to +175
V
A
W
V
°C
Note
(1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
VBR
VFM
IRM
CT
IR = 100 μA
IF = 100 A
IF = 100 A, TJ = 175 °C
VR = VR rated
TJ = 175 °C, VR = VR rated
VR = 400 V
400 -
- 1.06
- 0.85
- 1.3
- 0.36
- 100
MAX.
-
1.24
0.95
50
4
-
UNITS
V
μA
mA
pF
Revision: 22-Jul-13
1 Document Number: 93994
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-UFB210FA40P Datasheet

Insulated Ultrafast Rectifier Module

No Preview Available !

VS-UFB210FA40P pdf
www.vishay.com
VS-UFB210FA40P
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 150 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 125 °C
-
-
-
-
-
-
-
TYP.
40
93
172
10.5
20.2
490
1740
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
RthJC
Case to heatsink
Weight
RthCS
Mounting torque
Case style
TEST CONDITIONS
Flat, greased surface
MIN.
-
-
-
-
-
TYP. MAX.
- 0.32
- 0.16
0.1 -
30 -
- 1.3
SOT-227
UNITS
°C/W
g
Nm
1000
100
TJ = 175 °C
TJ = 25 °C
10
1
0 0.5 1.0 1.5 2.0 2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
10 000
1000
100
TJ = 175 °C
10
1
TJ = 25 °C
0.1
0.01
0.001
0
100 200 300 400
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
10
10
100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 22-Jul-13
2 Document Number: 93994
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-UFB210FA40P
Description Insulated Ultrafast Rectifier Module
Maker Vishay
Total Page 7 Pages
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