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Vishay Intertechnology Electronic Components Datasheet

VS-GT140DA60U Datasheet

Insulated Gate Bipolar Transistor

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VS-GT140DA60U pdf
www.vishay.com
VS-GT140DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 140 A
SOT-227
PRODUCT SUMMARY
VCES
600 V
IC DC
140 A at 90 °C (1)
VCE(on) typical at 100 A, 25 °C
1.72 V
IF DC
71 A at 90 °C
Package
SOT-227
Circuit
Single Switch Diode
Note
(1) Maximum collector current admitted is 100 A, to do not exceed
the maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 90 °C
Gate-to-emitter voltage
VGE
Power dissipation, IGBT
TC = 25 °C
PD
TC = 90 °C
Power dissipation, diode
TC = 25 °C
PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
MAX.
600
200
140
350
350
104
71
± 20
652
370
238
135
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 94772
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GT140DA60U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GT140DA60U pdf
www.vishay.com
VS-GT140DA60U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 250 μA
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
VCE(on)
VGE(th)
VGE(th)/TJ
ICES
VFM
IGES
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 175°C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = 0 V, VCE = 600 V, TJ = 175 °C
IF = 40 A, VGE = 0 V
IF = 40 A, VGE = 0 V, TJ = 125 °C
IF = 40 A, VGE = 0 V, TJ = 150 °C
VGE = ± 20 V
MIN.
600
-
-
-
3.5
-
-
-
-
-
-
-
-
-
TYP.
-
1.7
2.0
2.15
4.6
2.65
-16.8
0.6
0.15
8
1.74
1.35
1.2
-
MAX.
-
2.0
2.2
-
6.5
-
-
100
3
-
2.2
1.74
-
± 200
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode reverse recovery current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Short circuit safe operating area
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
SCSOA
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
TJ = 175 °C, IC = 350 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
TJ = 175 °C, Rg = 22 VGE = 15 V to 0 V,
VCC = 400 V, VP = 600 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.43
1.50
1.93
130
50
127
82
0.43
2.12
2.55
130
52
130
100
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 72 -
- 5.5 -
- 200 -
- 144 -
- 13 -
- 930 -
3
UNITS
mJ
ns
mJ
ns
ns
A
nC
ns
A
nC
μs
Revision: 13-Sep-13
2 Document Number: 94772
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GT140DA60U
Description Insulated Gate Bipolar Transistor
Maker Vishay
Total Page 10 Pages
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