http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Vishay Intertechnology Electronic Components Datasheet

VS-GB90DA60U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GB90DA60U pdf
www.vishay.com
VS-GB90DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 90 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
IF DC
Package
Circuit
600 V
90 A at 90 °C
2.40 V
108 A at 90 °C
SOT-227
Single Switch Diode
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate-to-emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
Isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 min
MAX.
600
147
90
300
300
180
108
± 20
625
300
379
182
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB90DA60U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GB90DA60U pdf
www.vishay.com
VS-GB90DA60U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 250 μA
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
VCE(on)
VGE(th)
VGE(th)/TJ
ICES
VFM
IGES
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 150°C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 100 A, VGE = 0 V
IC = 100 A, VGE = 0 V, TJ = 125 °C
IC = 100 A, VGE = 0 V, TJ = 150 °C
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
-
-
-
-
TYP.
-
2.4
3
3.3
3.9
2.5
-10
7
1.5
6
1.6
1.56
1.53
-
MAX.
-
2.8
3.4
-
5.0
-
-
100
6.0
10
2.1
2.0
-
± 200
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 100 A, VCC = 480 V, VGE = 15 V
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
TJ = 150 °C, IC = 300 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
0.39
1.10
1.49
245
53
240
63
0.52
1.24
1.76
240
54
250
80
MAX.
690
250
130
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 95 -
- 10 -
- 480 -
- 144 -
- 16 -
- 1136 -
UNITS
nC
mJ
ns
mJ
ns
ns
A
nC
ns
A
nC
Revision: 13-Sep-13
2 Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB90DA60U
Description Insulated Gate Bipolar Transistor
Maker Vishay
Total Page 10 Pages
PDF Download
VS-GB90DA60U pdf
Download PDF File
VS-GB90DA60U pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 VS-GB90DA60U Insulated Gate Bipolar Transistor Vishay
Vishay
VS-GB90DA60U pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components