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Vishay Intertechnology Electronic Components Datasheet

VS-GB70LA60UF Datasheet

IGBT

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VS-GB70LA60UF pdf
www.vishay.com
VS-GB70LA60UF
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
Package
Circuit
600 V
70 A at 88 °C
2.23 V
70 A at 86 °C
SOT-227
Chopper low side switch
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
VCES
IC
ICM
ILM
IF
IFM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Revision: 02-Aug-13
1 Document Number: 93104
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB70LA60UF Datasheet

IGBT

No Preview Available !

VS-GB70LA60UF pdf
www.vishay.com
VS-GB70LA60UF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 35 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 70 A
VGE = 15 V, IC = 35 A, TJ = 125 °C
VGE = 15 V, IC = 70 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V
ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR IR = 1 mA
IC = 35 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 70 A, VGE = 0 V
IC = 35 A, VGE = 0 V, TJ = 125 °C
IC = 70 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
600
-
-
-
-
-
-
-
TYP.
-
1.69
2.23
2.07
2.89
3.9
-9
1
0.07
-
1.8
2.13
1.35
1.7
0.1
0.01
-
MAX.
-
1.88
2.44
2.31
3.21
5
-
100
2.0
-
2.33
2.71
1.81
2.32
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Qg
Qge IC = 50 A, VCC = 400 V, VGE = 15 V
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon IC = 70 A, VCC = 360 V,
Eoff VGE = 15 V, Rg = 5 
Etot L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
td(off)
tf
RBSOA
trr
TJ = 150 °C, IC = 120 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V
Diode peak reverse current
Irr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qrr
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
1.15
1.16
2.31
1.27
1.28
2.55
208
69
208
100
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 59 93
- 46
- 118 279
- 130 159
- 11 13
- 715 995
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 02-Aug-13
2 Document Number: 93104
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB70LA60UF
Description IGBT
Maker Vishay
Total Page 9 Pages
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