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Vishay Intertechnology Electronic Components Datasheet

VS-GA250SA60S Datasheet

Insulated Gate Bipolar Transistor

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VS-GA250SA60S pdf
www.vishay.com
VS-GA250SA60S
Vishay Semiconductors
Insulated Gate Bipolar Transistor
Ultralow VCE(on), 250 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) (typical) at 200 A, 25 °C
IC at TC = 90 °C (1)
Package
600 V
1.33 V
250 A
SOT-227
Circuit
Single Switch no Diode
Note
(1) Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals
FEATURES
• Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz
• Lowest conduction losses available
• Fully isolated package (2500 VAC)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
Pulsed collector current
Clamped Inductive load current
Gate to emitter voltage
IC (1)
TC = 25 °C
TC = 90 °C
ICM
Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature
ILM
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, Rg = 2.0 ,
VGE
Power dissipation
TC = 25 °C
PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 minute
Note
(1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
MAX.
600
400
250
400
400
± 20
961
462
2500
UNITS
V
A
V
W
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
Thermal resistance junction to case
Thermal resistance case to heatsink
Weight
Mounting torque
Case style
TJ, TStg
RthJC
RthCS
Flat, greased surface
SOT-227
MIN.
-40
-
-
-
-
TYP.
-
-
0.05
30
-
MAX.
150
0.13
-
-
1.3
UNITS
°C
°C/W
g
Nm
Revision: 13-Sep-13
1 Document Number: 94704
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GA250SA60S Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GA250SA60S pdf
www.vishay.com
VS-GA250SA60S
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Emitter to collector breakdown voltage
V(BR)CES
V(BR)ECS (1)
VGE = 0 V, IC = 1 mA
VGE = 0 V, IC = 1.0 A
IC = 100 A
Collector to emitter voltage
VCE(on)
IC = 200 A
IC = 100 A, TJ = 125 °C
IC = 200 A, TJ = 125 °C
VGE = 15 V
IC = 100 A, TJ = 150 °C
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage VGE(th)/TJ
IC = 200 A, TJ = 150 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VCE = VGE, IC = 1 mA, 25 °C to 125 °C
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V
ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = 0 V, VCE = 600 V, TJ = 150 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
Notes
(1) Pulse width 80 μs; duty factor 0.1 %
MIN.
600
18
-
-
-
-
-
-
3.0
-
-
-
-
-
-
TYP.
-
-
1.10
1.33
1.02
1.32
1.02
1.33
4.5
3.1
-12
20
0.2
0.6
-
MAX.
-
-
1.3
1.66
-
-
-
-
6.0
-
-
1000
-
10
± 250
UNITS
V
mV/°C
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate-to-emitter charge (turn-on)
Qg
Qge IC = 100 A, VCC = 600 V, VGE = 15 V
Gate-to-collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
TJ = 25 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 5.0 
L = 500 μH
TJ = 125 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 5.0 
L = 500 μH
Energy
losses
include tail
and diode
recovery.
Diode used
60APH06
Fall time
Internal emitter inductance
tf
Between lead and
LE center of die contact
Input capacitance
Cies
Output capacitance
Reverse transfer capacitance
Coes
Cres
VGE = 0 V , VCC = 30 V, f = 1.0 MHz
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
770
100
260
0.55
25
25.5
267
42
310
450
0.67
43.0
43.7
275
50
350
700
MAX.
1200
150
380
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
nC
mJ
ns
mJ
ns
5.0 - nH
16 250
1040
190
-
-
-
pF
Revision: 13-Sep-13
2 Document Number: 94704
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GA250SA60S
Description Insulated Gate Bipolar Transistor
Maker Vishay
Total Page 9 Pages
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