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Vishay Intertechnology Electronic Components Datasheet

VS-EMG050J60N Datasheet

Dual Mode PFC

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VS-EMG050J60N pdf
www.vishay.com
VS-EMG050J60N
Vishay Semiconductors
Dual Mode PFC, 60 A
EMIPAK2
PRODUCT SUMMARY
VCES
VCE(ON) typical at IC = 50 A
IC at TC = 98 °C
Package
Circuit
600 V
1.8 V
50 A
EMIPAK2
Dual Mode PFC
FEATURES
• NPT Warp2 PFC IGBT with low VCE(ON)
• Silicon carbide PFC diode
• Antiparallel FRED Pt® fast recovery
• Integrated thermistor
• Square RBSOA
• Operating frequency 60 kHz to 150 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-EMG050J60N is an integrated solution for dual stage
PFC converter in a single package. The EMIPAK2 package
is easy to use thanks to the solderable terminals and
provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature
Storage temperature range
RMS isolation voltage
PFC IGBT Q1 - Q2
TJ
TStg
VISOL
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
ANTIPARALLEL DIODE D1 - D2
VCES
VGES
ICM
ILM (1)
IC
PD
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Diode continuous forward current
Single pulse forward current
Power dissipation
PFC DIODE D3 - D4
IF
TC = 25 °C
TC = 80 °C
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
PD
TC = 25 °C
TC = 80 °C
Repetitive peak reverse voltage
Diode continuous forward current
Single pulse forward current
Power dissipation
VRRM
IF
IFSM
PD
TC = 25 °C
TC = 80 °C
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) VCC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
MAX.
150
- 40 to 125
3500
600
20
150
150
88
60
338
189
16
11
59
29
16
600
25
17
140
74
41
UNITS
°C
V
V
A
W
A
W
V
A
W
Revision: 18-Oct-13
1 Document Number: 93495
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-EMG050J60N Datasheet

Dual Mode PFC

No Preview Available !

VS-EMG050J60N pdf
www.vishay.com
VS-EMG050J60N
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
PFC IGBT Q1 - Q2
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
BVCES
BVCES/TJ
VGE = 0 V, IC = 500 μA
VGE = 0 V, IC = 500 μA
(25 °C to 125 °C)
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
VCE(ON)
VGE(th)
VGE(th)/TJ
VGE = 15 V, IC = 27 A
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 27 A, TJ = 125 °C
VGE = 15 V, IC = 50 A, TJ = 125 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 1 mA
( 25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
ANTIPARALLEL DIODE D1 - D2
gfe VCE = 20 V, IC = 50 A
VGE VCE = 20 V, IC = 50 A
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IGES VGE = ± 20 V, VCE = 0 V
Forward voltage drop
PFC DIODE D3 - D4
IF = 20 A
VF
IF = 20 A, TJ = 125 °C
Cathode to anode breakdown voltage
Reverse leakage current
Forward voltage drop
VBR IR = 500 μA
VR = 600 V
IRM
VR = 600 V, TJ = 125 °C
IF = 10 A
VF
IF = 10 A, TJ = 125 °C
MIN. TYP. MAX. UNITS
600 - - V
- 0.1 - V/°C
- 1.44 1.75
- 1.8 2.1
- 1.7 2.05
- 2.2 2.5
2.9 3.9 5.3
V
- - 10 - mV/°C
- 95 -
s
- 5.9 -
V
- 3 100 μA
- 0.170 3
mA
- ± 200 nA
- 2.19 2.4
V
- 1.93 2.15
600 - - V
- 27 250 μA
- 0.1 1 mA
- 1.34 1.63
V
- 1.36 1.65
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE)
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qg
Qge
Qgc
EON
EOFF
ETOT
td(on)
tr
td(off)
tf
IC = 70 A
VCC = 400 V
VGE = 15 V
IC = 50 A
VCC = 400 V
VGE = 15 V
Rg = 4.7 
L = 500 μH
TJ = 25 °C (1)
MIN. TYP. MAX. UNITS
- 480 720
- 82 164 nC
- 160 260
- 0.155 -
- 0.471 -
mJ
- 0.626 -
- 196 -
- 29 -
- 220 -
ns
- 67 -
Revision: 18-Oct-13
2 Document Number: 93495
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-EMG050J60N
Description Dual Mode PFC
Maker Vishay
Total Page 12 Pages
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