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Vishay Intertechnology Electronic Components Datasheet

VS-20MT120UFAPbF Datasheet

IGBT MTP

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VS-20MT120UFAPbF pdf
www.vishay.com
VS-20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
MTP
PRODUCT SUMMARY
VCES
IC at TC = 96 °C
VCE(on) (typical)
at IC = 20 A, 25 °C
Package
Circuit
1200 V
20 A
3.29 V
MTP
Full bridge
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Low diode VF
• Square RBSOA
• Al2O3 DBC substrate
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode maximum forward current
IFM
Gate to emitter voltage
VGE
RMS isolation voltage
VISOL
Maximum power dissipation (only IGBT)
PD
Operating junction temperature range
TJ
TEST CONDITIONS
TC = 96 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
1200
20
100
100
100
± 20
2500
240
96
-40 to +150
UNITS
V
A
V
W
°C
Revision: 30-Oct-13
1 Document Number: 94470
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-20MT120UFAPbF Datasheet

IGBT MTP

No Preview Available !

VS-20MT120UFAPbF pdf
www.vishay.com
VS-20MT120UFAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES
Temperature coefficient of breakdown voltage V(BR)CES/TJ
Collector to emitter saturation voltage
VCE(on)
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 3 mA (25 to 125 °C)
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 20 A, TJ = 125 °C
VGE = 15 V, IC = 40 A, TJ = 125 °C
VGE = 15 V, IC = 20 A, TJ = 150 °C
Gate threshold voltage
Temperature coefficient of threshold voltage
VGE(th)
VGE(th)/TJ
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 3 mA (25 to 125 °C)
Transconductance
gfe VCE = 50 V, IC = 20 A, PW = 80 μs
Zero gate voltage collector current
ICES (1)
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
Gate to emitter leakage current
Note
(1) ICES includes also opposite leg overall leakage
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+ 1.3
3.29
4.42
3.87
5.32
3.99
-
- 14
17.5
-
0.7
2.9
-
MAX. UNITS
-V
- V/°C
3.59
4.66
4.11
V
5.70
4.27
6
- mV/°C
-S
250 μA
3.0
mA
9.0
± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
Cies
Coes
Cres
RBSOA
SCSOA
IC = 20 A
VCC = 600 V
VGE = 15 V
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and
diode reverse recovery
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and
diode reverse recovery
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
176
19
89
0.513
0.402
0.915
0.930
0.610
1.540
2530
344
78
MAX. UNITS
264
30 nC
134
0.770
0.603
1.373
1.395
mJ
0.915
2.310
3790
516 pF
117
Fullsquare
10 -
- μs
Revision: 30-Oct-13
2 Document Number: 94470
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-20MT120UFAPbF
Description IGBT MTP
Maker Vishay
Total Page 11 Pages
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