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Vishay Intertechnology Electronic Components Datasheet

CPV362M4FPbF Datasheet

IGBT SIP Module

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CPV362M4FPbF pdf
www.vishay.com
CPV362M4FPbF
Vishay Semiconductors
IGBT SIP Module
(Fast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
IRMS per phase (3.1 kW total)
with TC = 90 °C
TJ
11 A
125 °C
Supply voltage
Power factor
360 VDC
0.8
Modulation depth See fig. 1
115 %
VCE(on) (typical)
at IC = 4.8 A, 25 °C
Package
1.41 V
SIP
Circuit
Three Phase Inverter
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
RoHS
COMPLIANT
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current, each
IGBT
IC
Pulsed collector current
ICM
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each
IGBT
Operating junction and
storage temperature range
Soldering temperature
Mounting torque
ILM
IF
IFM
VGE
VISOL
PD
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Repetitive rating; VGE = 20 V,
pulse width limited by maximum
junction temperature. See fig. 20
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 50 See fig. 19
TC = 100 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
For 10 s
6-32 or M3 screw
MAX.
600
8.8
4.8
UNITS
V
26
A
800
3.4
26
± 20
2500
23
9.1
V
VRMS
W
- 40 to + 150
300 (0.063" (1.6 mm) from case)
5 to 7
(0.55 to 0.8)
°C
lbf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each diode, one diode in conduction
Case to sink, flat, greased surface
Weight of module
RthJC (IGBT)
RthJC (diode)
RthCS (module)
TYP.
-
-
0.1
20 (0.7)
MAX.
5.5
9.0
-
-
UNITS
°C/W
g (oz.)
Revision: 11-Jun-13
1 Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

CPV362M4FPbF Datasheet

IGBT SIP Module

No Preview Available !

CPV362M4FPbF pdf
www.vishay.com
CPV362M4FPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 250 μA
Pulse width 80 μs, duty factor 0.1 %
Temperature coeff. of breakdown voltage V(BR)CES TJ VGE = 0 V, IC = 1.0 mA
Collector to emitter saturation voltage
VCE(on)
IC = 4.8 A
IC = 8.8 A
IC = 4.8 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
Gate to emitter leakage current
IGES
VGE = ± 20 V
Temperature coeff. of threshold voltage
Forward transconductance
VGE(th) /TJ
gfe
VGE = 0 V, IC = 1.0 mA
VCE = 100 V, IC = 4.8 A
Pulse width 5.0 μs; single shot
Zero gate voltage collector current
Diode forward voltage drop
ICES VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
VFM
IC = 8.0 A
IC = 8.0 A, TJ = 150 °C
See fig. 13
MIN. TYP. MAX. UNITS
600 - - V
- 0.72 - V/°C
- 1.41 1.7
- 1.66 -
- 1.42 -
V
3.0 - 6.0
- - ± 100 nA
- -11 - mV/°C
2.9 5.0
-
S
- - 250
μA
- - 1700
- 1.4 1.7
V
- 1.3 1.6
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn on)
Gate to emitter charge (turn on)
Gate to collector charge
Turn-on delay time
Qg
Qge
Qgc
td(on)
IC = 4.8 A
VCC = 400 V
See fig. 8
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
tr
td(off)
tf
Eon
Eoff
TJ = 25 °C
IC = 4.8 A, VCC = 480 V
VGE = 15 V, RG = 50
Energy losses include “tail” and
diode reversev recovery.
See fig. 9, 10, 18
Total switching loss
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
TJ = 150 °C,
IC = 4.8 A, VCC = 480 V
VGE = 15 V, RG = 50
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
VGE = 0 V
VCC = 30 V
See fig. 7
Diode reverse recovery time
Diode peak reverse recovery current
Diode reverse recovery charge
trr
TJ = 25 °C See fig. 14
TJ = 125 °C
Irr
Qrr
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 15
See fig. 16
IF = 8.0 A
VR = 200 V
dI/dt = 200 A/μs
Diode peak rate of fall of recovery during tb dI(rec)M /dt
TJ = 25 °C See fig. 17
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
30
4.0
13
49
22
200
214
0.23
0.33
0.45
48
25
435
364
0.93
340
63
5.9
37
55
3.5
4.5
65
124
240
210
MAX. UNITS
45
6.0 nC
20
-
-
ns
300
320
-
- mJ
0.70
-
-
ns
-
-
- mJ
-
- pF
-
55
ns
90
50
A
8.0
138
nC
360
-
A/μs
-
Revision: 11-Jun-13
2 Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number CPV362M4FPbF
Description IGBT SIP Module
Maker Vishay
Total Page 9 Pages
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