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P0808ATG Datasheet Preview

P0808ATG Datasheet

N-Channel Enhancement Mode MOSFET

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P0808ATG pdf
P0808ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 8mΩ @VGS = 10V
ID
89A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
89
63
250
Avalanche Current
IAS 85
Avalanche Energy
L = 0.1mH
EAS
362
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
160
80
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqCS
TYPICAL
0.5
MAXIMUM UNITS
0.94
°C / W
Ver 1.0
1 2012/4/16



UNIKC
UNIKC

P0808ATG Datasheet Preview

P0808ATG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0808ATG pdf
P0808ATG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 80A
VDS = 50V, ID = 80A
75
2 2.3 4
±250
1
10
85
6.5 8
50
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS = 60V, VGS = 10V, ID = 80A
VDD = 40V,
ID @ 40A, VGS = 10V, RGS = 25Ω
7320
980
404
129
51
43.5
54
243
297
166
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 80A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 80A, dlF/dt = 100A / μS
120
410
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
89
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number P0808ATG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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