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UNIKC
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P0780ATF Datasheet Preview

P0780ATF Datasheet

N-Channel MOSFET

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P0780ATF pdf
P0780ATF/P0780ATFS
N-Channel High Voltage Mode Field Effect Transistor
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
800V
1.94Ω @VGS = 10V
ID
7A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 800
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
7
4
21
Avalanche Energy3
EAS 61
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
57
23
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.2
62.5
UNITS
°C / W
REV 1.1
1 2014-1-14




UNIKC
UNIKC

P0780ATF Datasheet Preview

P0780ATF Datasheet

N-Channel MOSFET

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P0780ATF pdf
P0780ATF/P0780ATFS
N-Channel High Voltage Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 800V, VGS = 0V, TC = 25 °C
VDS = 640V, VGS = 0V, TC = 100 °C
VGS = 10V, ID = 3.5A
VDS = 10V, ID = 3.5A
800
2.5 3.5 4.5
±100
1
100
1.46 1.94
5
V
nA
mA
Ω
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 640V, ID = 7A, VGS = 10V
VDD = 400V, ID = 7A,RG = 6Ω
1620
95
10
33
9.7
8.7
80
210
110
130
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 7A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / μS
775
5.5
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
7
1.4
A
V
nS
uC
REV 1.1
2 2014-1-14




UNIKC
UNIKC

P0780ATF Datasheet Preview

P0780ATF Datasheet

N-Channel MOSFET

No Preview Available !

P0780ATF pdf
P0780ATF/P0780ATFS
N-Channel High Voltage Mode Field Effect Transistor
REV 1.1
3 2014-1-14




Part Number P0780ATF
Description N-Channel MOSFET
Maker UNIKC
Total Page 6 Pages
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