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P0703ED Datasheet Preview

P0703ED Datasheet

P-Channel Enhancement Mode MOSFET

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P0703ED pdf
P0703ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ @VGS = -10V
ID
-68A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
-68
-43
-160
Avalanche Current
IAS -65
Avalanche Energy
L=0.1mH
EAS
214
Power Dissipation
TC= 25 °C
TC= 100°C
PD
60
24
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2The maximum current rating is package limited.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.08 °C / W
REV 1.0 1 2014/5/9



UNIKC
UNIKC

P0703ED Datasheet Preview

P0703ED Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

P0703ED pdf
P0703ED
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS =-24V, VGS = 0V
VDS =-20V, VGS = 0V, TJ = 125°C
VDS = -5V, VGS = -10V
-30
-1
-160
-1.4
-3
±30
1
10
V
mA
mA
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-4.5V, ID =-20A
VGS =-10V, ID =-20A
6 12
4 7.5
Forward Transconductance1
gfs
VDS =-5V, ID =-20A
58 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
5110
995
pF
Reverse Transfer Capacitance
Crss
850
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.7
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = -10V
VGS =-4.5V
Qgs
VDS =-15V, ID = -20A
118
61
12
Gate-Drain Charge2
Qgd
30
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
@VDS =-15V ,ID -20A,
VGS=-10V,RGS=6Ω
32
24
90
Fall Time2
tf
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -10A, VGS = 0V
-46
-1.3
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / μS
33
17
nS
nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0 2 2014/5/9


Part Number P0703ED
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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