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P0604BD Datasheet Preview

P0604BD Datasheet

N-Channel Enhancement Mode MOSFET

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P0604BD pdf
P0604BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 7mΩ @VGS = 10V
ID
64A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
64
40
150
Avalanche Current
IAS 50
Avalanche Energy
L = 0.1mH
EAS
125
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
65
UNITS
°C / W
Ver 1.1
1 2013-3-14



UNIKC
UNIKC

P0604BD Datasheet Preview

P0604BD Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0604BD pdf
P0604BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
1.7 2.2 3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TC = 125 °C
VDS = 10V, VGS = 10V
150
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
7.8 13
67
40
DYNAMIC
Input Capacitance
Ciss
2040
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz
378
Reverse Transfer Capacitance
Crss
244
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 20V, RL = 1Ω
ID @ 20A, VGS = 10V, RGEN = 6Ω
2.11
47
10
12
20
12
45
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
50
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
51
60
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-14


Part Number P0604BD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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